NTB5412N, NTP5412N
TYPICAL PERFORMANCE CURVES
100
80
60
10 V
T J = 25 ° C
6V
5.6 V
100 V DS ≥ 10 V
80
60
40
20
5.3 V
5.0 V
40
20
T J = 125 ° C
T J = 25 ° C
0
0
1
2
3
V GS = 4.5 V
4
5
0
3
4
5
T J = ? 55 ° C
6
7
8
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
I D = 30 A
T J = 25 ° C
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
T J = 25 ° C
V GS = 10 V
0.005
5
6
7
8
9
10
0.005
10
20
30
40
50
60
2.4
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
1000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.2
2
1.8
I D = 60 A
V GS = 10 V
V GS = 0 V
T J = 150 ° C
1.6
1.4
1.2
1
0.8
100
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
40
45
50
55 60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
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相关代理商/技术参数
NTB5426N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5426NT4G 功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp
NTB5605PG 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4G 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605T4G 功能描述:MOSFET PFET 60V 18.5A TR D2PAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube